Solid state crystal physics at very low temperatures. Final report, 1 July 1979-30 June 1980
Description
The mechanical dissipation (Q) and resonant frequency of a 15 kg silicon crystal were measured at cryogenic temperatures. In the experiment described, temperature control was incorporated to reduce the time derivative of the temperature. The results of the Q measurements with and without this temperature control are quite different. Measurements of the resonant frequency of the fundamental longitudinal mode of the silicon crystal from 6 to 300 Kelvin are presented and discussed with respect to temperature, df/dT. It is observed that frequency increases as temperature decreases down to about 16 Kelvin, i.e. dt/dT is negative. However, below this temperature the frequency decreases as temperature decreases, i.e. dt/dT is positive. It is suggested that this behavior is related to the coefficient of thermal contraction of silicon, which changes sign at 18 Kelvin. Continuation of these experiments to 20 mK is discussed
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS. PC A04/MF A01.Additional details
Publishing Information
- Imprint Pagination
- 64 p.
- Report number
- NASA-CR--164548
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 13681379
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- LATTICE VIBRATIONS; LOW TEMPERATURE; MONOCRYSTALS; SILICON; TEMPERATURE DEPENDENCE; ULTRALOW TEMPERATURE
- Descriptors DEC
- CRYSTALS; ELEMENTS; SEMIMETALS