Orientation dependences of characteristic x radition and elastically scattered proton yields from Si monocrystal near <111> axis at Ep=0.75 MeV

Orientation dependence of K-line yield of cahracteristic radiation from Si monocrystal excited with protons of energy Ep=0.75 meV was investigated experimentally. To record characteristic radiation and X-ray radiation detector was used. A surface barrier detector was used to record simultaneously spectra of elastically scattered protons. Angular scanning was performed near <111> monocrystal axis. Similarity is noted of orientation maxima of characteristic radiation and protons scattered in a monocrystal subdependence layer that was 3-4 m thick. Such behaviour of orientation dependence of characteristic radiation yeild is believed to be due to it's being generated in a channeling regime mainly by unchanneled protons since they are few at a small depth and become more numerous when the depth grows. A possibility is noted to control and average depth of characteristic radiation generation by varying channeling conditions with a purpose to investigate monocrystals at different depths