Published 2002 | Version v1
Miscellaneous Metadata-only

High-quality p-n junctions fabrication by ion implantation using LPCVD amorphous silicon films

Creators

  • 1. Institute of Electron Technology, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002

Additional details

Publishing Information

Imprint Title
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Imprint Pagination
174 p.
Journal Page Range
p. 84

Conference

Title
4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Dates
10-13 Jun 2002
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
34075145
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
AMORPHOUS STATE; BORON IONS; CHEMICAL VAPOR DEPOSITION; COMPUTERIZED SIMULATION; DIFFUSION; ELECTRIC CONDUCTIVITY; FABRICATION; ION IMPLANTATION; OPTIMIZATION; OXIDATION; P-N JUNCTIONS; RADIATION DETECTORS; SILICON; THICKNESS; THIN FILMS
Descriptors DEC
CHARGED PARTICLES; CHEMICAL COATING; CHEMICAL REACTIONS; DEPOSITION; DIMENSIONS; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; IONS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SIMULATION; SURFACE COATING

Optional Information