Published July 2016
| Version v1
Journal article
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
Creators
- 1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
- 2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
- 3. Peter the Great Saint-Petersburg Polytechnic University (Russian Federation)
- 4. Ustinov Baltic State Technical University "VOENMEKh" (Russian Federation)
- 5. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Description
The terahertz electroluminescence from Cd0.7Hg0.3Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 50
- Journal Issue
- 7
- Journal Page Range
- p. 915-919
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48098399
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRONIC STRUCTURE; EMISSION SPECTRA; MERCURY TELLURIDES; QUANTUM WELLS; THZ RANGE; TUNNEL EFFECT; VALENCE
- Descriptors DEC
- CHALCOGENIDES; CURRENTS; ELECTRICAL PROPERTIES; EMISSION; FREQUENCY RANGE; LUMINESCENCE; MERCURY COMPOUNDS; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2016 Pleiades Publishing, Ltd.