Published August 1992
| Version v1
Journal article
Radiation imaging with 2D a-Si sensor arrays
- 1. Xerox Palo Alto Research Center, CA (United States)
Description
In this paper radiation imaging with a large-area amorphous silicon (a-Si) sensor array is discussed. X-ray images approaching medical diagnostic quality are obtained by a 256 x 240 array of 0.45 mm pixel pitch with 40 ms exposure time. Low-flux γ ray imaging is demonstrated by a 64 x 40 sensor array with pixel pitch of 0.9 mm, operated at a low external bias with 20 sec integration time. The signal readout process is modeled and compared with experiments. At low external bias, charge collection and retention characteristics are influenced by the additional sensor-bias created by the charge injection associated with the TFT operation. Charge retention in a sensor element is limited by the leakage through the sensor
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 39
- Journal Issue
- 4
- Journal Page Range
- p. 1056-1062.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 1991 Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference.
- Dates
- 2-9 Nov 1991.
- Place
- Santa Fe, NM (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24033786
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S61: RADIATION PROTECTION AND DOSIMETRY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; GAMMA RADIATION; IMAGE PROCESSING; RADIATION DETECTORS; SI SEMICONDUCTOR DETECTORS; SILICON; TWO-DIMENSIONAL CALCULATIONS; X-RAY EQUIPMENT
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; IONIZING RADIATIONS; MEASURING INSTRUMENTS; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMIMETALS
Optional Information
- Secondary number(s)
- CONF-911106--.