Structural and magnetic properties of iron on modulation-doped (001) GaAs and on modulation-doped InAs heterostructures
- 1. Institut fuer Angewandte Physik, Universitaet Hamburg, 20355 Hamburg (Germany)
Description
We study hybrid structures comprising a ferromagnetic metal layer on III/V compound heterostructures in view of spintronic applications. While iron on modulation-doped (001)GaAs is a well-established system, corresponding experiments of iron on InAs-HEMTs are not appeared so far. InAs is of high interest because of the low Schottky barrier and strong spin-orbit coupling. In this talk, I give an account of the growth and strain relaxation of iron on modulation-doped (001)GaAs and on inverted modulation-doped InAs heterostructures investigated with in-situ reflection high-energy electron diffraction (RHEED). Furthermore, we employed high-resolution X-ray diffraction and magneto-optical Kerr measurements to investigate structural as well as magnetic properties of these structures.
Additional details
Identifiers
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Issue
- Regensburg 2013 issue
- Series
- Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 48(3)
- Journal Page Range
- [1 p.]
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- DPG Spring meeting of the condensed matter section (SKM) together with the divisions microprobes, radiation and medical physics and working groups industry and business, young DPG
- Dates
- 10-15 Mar 2013
- Place
- Regensburg (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 46007201
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BRAGG REFLECTION; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRON DIFFRACTION; FERROMAGNETIC MATERIALS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; IRON; KERR EFFECT; LAYERS; MAGNETIC PROPERTIES; MAGNETO-OPTICAL EFFECTS; MODULATION; RELAXATION; STRAINS; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; METALS; PHYSICAL PROPERTIES; PNICTIDES; REFLECTION; SCATTERING; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS
Optional Information
- Notes
- Session: HL 73.2 Do 09:45; No further information available