Published July 2001 | Version v1
Book Metadata-only

Role of MeV ion implantation in limiting transient enhanced diffusion of boron atoms in silicon

Creators

  • 1. Academia Sinica, Lanzhou (China). Inst. of Modern Physics
  • 2. University of Surrey, Surrey Centre for Research in Ion Beam Applications, Guildford, Surrey (Ukraine)

Description

no abstract available

Part of:
IMP and NLHIAL annual report (2000)

Additional details

Publishing Information

Publisher
Atomic Energy Press, Beijing
Imprint Place
Beijing (China)
ISBN
7-5022-2421-1
Imprint Title
IMP and NLHIAL annual report (2000)
Imprint Pagination
190 p.
Journal Page Range
p. 143-144

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
33002889
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; BORON; BORON IONS; DIFFUSION; ION IMPLANTATION; IRON IONS; IRRADIATION; OXYGEN IONS; P-N JUNCTIONS; RADIATION DOSES; SILICON
Descriptors DEC
CHARGED PARTICLES; DOSES; ELEMENTS; HEAT TREATMENTS; IONS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS

Optional Information