Published September 1998 | Version v1
Journal article Metadata-only

Microstructure of silicon nitride thin film

Creators

  • 1. South Chian Normal Univ., Guangzhou (China). Dept. of Physics
  • 2. Institute of Quantum Electronics South China Normal Univ., Guangzhou (China)
  • 3. Academia Sinica, Hefei (China). Inst. of Plasma Physics

Description

The microstructure of silicon nitride thin film prepared by ECR-PECVD is studied by transmission electron microscopy (TEM), scanning tunnel microscopy (STM) and PDS microphotometer. The results indicate that the Si3N4 thin film prepared by ECR-PECVD at lower temperature is the nano-Si3N4 thin film, the crystalline grain size lies between 14 to 29 nm, and this kind of Si3N4 thin film has fine surface smoothness. The authors analyzed the mechanism of the formation of crystalline Si3N4 thin film at lower deposition temperature

Additional details

Publishing Information

Journal Title
Acta Physica Sinica
Journal Volume
47
Journal Issue
9
Journal Page Range
p. 1529-1535
ISSN
1000-3290

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
29057918
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRON CYCLOTRON-RESONANCE; GRAIN SIZE; MICROSCOPY; MICROSTRUCTURE; PHOTOMETERS; PLASMA; SAMPLE PREPARATION; SILICON NITRIDES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT
Descriptors DEC
CHEMICAL COATING; CRYSTAL STRUCTURE; CYCLOTRON RESONANCE; DEPOSITION; ELECTRON MICROSCOPY; FILMS; MEASURING INSTRUMENTS; MICROSCOPY; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; PHASE TRANSFORMATIONS; PNICTIDES; RESONANCE; SILICON COMPOUNDS; SIZE; SURFACE COATING