Published November 21, 2002
| Version v1
Journal article
GaAs as a material for particle detectors
Description
Among the possible semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to its high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors on the base of SI-GaAs are presented
Additional details
Identifiers
- PII
- S0168900202014559;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 494
- Journal Issue
- 1-3
- Journal Page Range
- p. 120-127
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34012199
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CARRIER MOBILITY; CHARGE COLLECTION; DENSITY; ELECTRICAL PROPERTIES; FABRICATION; GALLIUM ARSENIDES; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; RADIATION DETECTORS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.