Published May 1989 | Version v1
Journal article Metadata-only

Nitrogen accumulation kinetics in silicon during formation of substructure insulating layers under high-intensity ion irradiation

Creators

  • 1. Belorusskij Gosudarstvennyj Univ., Minsk (Byelorussian SSR). Inst. Prikladnykh Fizicheskikh Problem

Description

Regularities of Si3N4 concealed layer formation under high-intensity ion irradiation, kinetics of nitrogen atom accumulation and mechanisms resulting in variation of profile shape and position are investigated. It is shown that extended composition-homogeneous layer of silicon nitride within 80-160 nm depth range is formed at a certain stage of irradiation

Additional details

Additional titles

Original title (Russian)
Кинетика накопления азота в кремнии при создании скрытых изолирующих слоев высокоинтенсивным ионным облучением

Publishing Information

Journal Title
Mikroehlektronika
Journal Volume
18
Journal Issue
3
Series
Mikroehlektronika.
Journal Page Range
247-251
ISSN
0544-1269
CODEN
MKETA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
22010707
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BACKSCATTERING; DEPTH; ION IMPLANTATION; KEV RANGE 100-1000; KINETICS; LAYERS; MONOCRYSTALS; NITROGEN IONS; QUANTITY RATIO; RADIATION DOSES; RUTHERFORD SCATTERING; SILICON; SILICON NITRIDES; SPATIAL DISTRIBUTION
Descriptors DEC
CHARGED PARTICLES; CRYSTALS; DIMENSIONS; DISTRIBUTION; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING; SEMIMETALS; SILICON COMPOUNDS