Published March 2018
| Version v1
Journal article
Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon
Creators
- 1. Saratov State University (Russian Federation)
Description
The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 52
- Journal Issue
- 3
- Journal Page Range
- p. 331-334
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49101033
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- OPTICAL PROPERTIES; POROUS MATERIALS; RADIATION DOSES; RADIUM 226; SILICON
- Descriptors DEC
- ALKALINE EARTH ISOTOPES; ALPHA DECAY RADIOISOTOPES; CARBON 14 DECAY RADIOISOTOPES; DOSES; ELEMENTS; EVEN-EVEN NUCLEI; HEAVY ION DECAY RADIOISOTOPES; HEAVY NUCLEI; ISOTOPES; MATERIALS; NUCLEI; PHYSICAL PROPERTIES; RADIOISOTOPES; RADIUM ISOTOPES; SEMIMETALS; YEARS LIVING RADIOISOTOPES
Optional Information
- Copyright
- Copyright (c) 2018 Pleiades Publishing, Ltd.