Features of MIS-structures at InAs

The possibilities of changing the charge in anode oxide (AO) at n-InAs are investigated. It is shown that the positive charge value in MIS-struotures on the InAs base with anode oxide can be reduced at the expense of a preliminary annealing the semiconductor and its subsequent anodization together with an aluminium layer deposited on the surface by vacuum evaporation. UV irradiation of structures at positive shifting at the electrode in case of treatment in electrical field and at the temperature of 300 K completely eliminates the positive charge- in oxide. With the decrease of MIS-structure temperature with a positive potential at the metallic electrode up to 77 K one can succeed in fixing the negative charge in anode oxide