Published September 2007
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DLTS study of the A-band temperature dependence in silicon
Description
For the first time the temperature dependence of the A-band related to the VO defect in silicon has been studied by DLTS method. Two regions with different behaviour of amplitude of the signal in temperature range of formation of A-band at small filling pulse duration were determined. It was shown that A-band consists of two components, one of them has barrier for trapping of electrons. The nature of observed components was discussed. (authors)
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Additional details
Additional titles
- Original title (Russian)
- DLTS исследования температурной зависимости амплитуды А-полосы в кремнии
Publishing Information
- Imprint Place
- Minsk (Belarus)
- ISBN
- 978-985-476-530-3
- Imprint Title
- Interaction of radiation with solids. Proceedings of the 7. international conference
- Imprint Pagination
- 412 p.
- Journal Page Range
- p. 116-118
- Report number
- INIS-BY--083
Conference
- Title
- 7. International conference 'Interaction of radiation with solids'
- Original Conference Title
- 7. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 26-28 Sep 2007
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 38109105
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; CROSS SECTIONS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; MEV RANGE 01-10; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY; ENERGY RANGE; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SPECTROSCOPY
Optional Information
- Notes
- 17 refs., 2 figs. Imprint:'Vzaimodejstvie izluchenij s tverdym telom'. Materialy 7. Mezhdunarodnoj konferentsii