Room temperature humidity sensors based on co-evaporated TeO2 and Sn
Creators
- 1. Acad. J. Malinowski Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria)
Description
Thin layers prepared by vacuum co-deposition of TeO2 and Sn are studied as humidity sensors working at room temperature. They are amorphous and, due to chemical interaction between the two substances, are built up of a mixed Sn- and Te-oxide matrix and a dispersed phase that at RSn/Te < 2.0 consists of elemental Te. The optimal composition of the layers is obtained by varying the atomic ratio RSn/Te. Auger analysis is used to follow the in-depth distribution of the components. It is shown that the layers have a homogeneous composition over their entire depth. For RSn/Te = 0.8-0.9, they exhibit very high sensitivity to humidity -the electrical resistance changes by more than 4 decades in the range of 20 - 90% RH. The sensor response is very fast and the recovery period, very short. A very high long-term stability is observed as well.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/356/1/012033Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 356
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 17. international summer school on vacuum, electron, and ion technologies
- Acronym
- VEIT 2011
- Dates
- 19-23 Sep 2011
- Place
- Sunny Beach (Bulgaria)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43104829
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; ELECTRIC CONDUCTIVITY; HUMIDITY; LAYERS; MATRIX MATERIALS; SENSITIVITY; SENSORS; SPATIAL DISTRIBUTION; TELLURIUM OXIDES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIN
- Descriptors DEC
- CHALCOGENIDES; DISTRIBUTION; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; MATERIALS; METALS; MOISTURE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SPECTROSCOPY; TELLURIUM COMPOUNDS; TEMPERATURE RANGE