Published October 1993
| Version v1
Journal article
A study of electron irradiation effects on silicon power devices by BF-5 Linac
Creators
- 1. Beijing Normal Univ., BJ (China). Inst. of Low Energy Nuclear Physics
Description
An attempt to develop electron irradiation power devices has been described. The BF-5 LINAC accelerator was used to irradiate many kinds of devices. The relation between the life time of minority carriers and electron flux was studied. In addition, the deep energy level of recombination center, capture cross section and annealing character have been investigated. The dominant defects are dual vacancy pairs of mononegative charge state (Ec - 0.42ev) and oxygen vacancy pairs (Ec - 0.18ev). The oxygen vacancy pairs disappear, when the annealing temperature is higher than 300oC. (author)
Additional details
Publishing Information
- Journal Title
- Radiation Physics and Chemistry
- Journal Volume
- 42
- Journal Issue
- 4-6
- Journal Page Range
- p. 1043-1046.
- ISSN
- 0146-5724
- CODEN
- RPCHDM
Conference
- Title
- 8. international meeting on radiation processing.
- Dates
- 13-18 Sep 1992.
- Place
- Beijing (China).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 25029122
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CARRIER LIFETIME; ELECTRON BEAMS; IRRADIATION; PHYSICAL RADIATION EFFECTS; SILICON DIODES; TEMPERATURE RANGE 0273-0400 K; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; HEAT TREATMENTS; LEPTON BEAMS; LIFETIME; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE