Studies on multiplication effect of noises of PPDs, and a proposal of a new structure to improve the performance
Creators
- 1. Department of Physics, University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo (Japan)
- 2. ICEPP, University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo (Japan)
Description
Pixelated Photon Detectors (PPDs) are arrayed APDs operated in Geiger-mode. Multi-Pixel Photon Counter (MPPC) is a PPD produced by Hamamatsu Photonics K.K. Test of dark noise rate of a 1600 pixel MPPC as a function of over-voltage at room temperature indicates that the over-voltage is limited up to a few volts because of explosive increase of noise rate. The over-voltage dependence of random noise rate is nevertheless mostly linear. We confirmed this is due to multiplication effect of noises because of after-pulsing and crosstalk. Over-voltage dependence of random noise and photon detection efficiency are qualitatively different. Considering the electric field structure of MPPC (p-on-n type) and Geiger-efficiency as a function of the position of initial pair creation, these characteristics are possible to be understood. One suggestion for p-on-n type PPD from these results is narrowing the depletion layer below the multiplication layer to reduce random noise and after-pulsing. Another proposal is to put additional buffer capacitance parallel to the diode to accomplish higher gain with lower over-voltage simultaneously with lower noise rate.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2009.11.012Additional details
Identifiers
- DOI
- 10.1016/j.nima.2009.11.012;
- arXiv
- arXiv:0811.1402v1;
- PII
- S0168-9002(09)02161-5;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 613
- Journal Issue
- 1
- Journal Page Range
- p. 23-28
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41083130
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CAPACITANCE; DEPLETION LAYER; EFFICIENCY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; NOISE; PERFORMANCE; PHOTOMULTIPLIERS; PHOTONS; RANDOMNESS; SI SEMICONDUCTOR DETECTORS; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- BOSONS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; LAYERS; MASSLESS PARTICLES; MEASURING INSTRUMENTS; PHOTOTUBES; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.