Published January 6, 2014 | Version v1
Journal article

The importance of holes in aluminium tris-8-hydroxyquinoline (Alq3) devices with Fe and NiFe contacts

  • 1. Materials Research Institute, School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)
  • 2. State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433 (China)
  • 3. College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

Description

To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq3) based spin valves, single Alq3 layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobility compared to electron mobility. We compare the mobility measured by DI for the dominant carrier injected from NiFe and Fe electrodes into Alq3, to that of holes measured by ToF. This comparison leads us to conclude that the dominant charge carriers in Alq3 based spin valves with NiFe or Fe electrodes are holes

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
1
Journal Page Range
p. 013303-013303.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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