Published April 30, 2008 | Version v1
Journal article

Fabrication of ferromagnetic Ni epitaxial thin film by way of hydrogen reduction of NiO

  • 1. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta 4259-R3-6, Midori-ku, Yokohama 226-8503 (Japan)
  • 2. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta 4259-J2-40, Midori-ku, Yokohama 226-8503 (Japan)
  • 3. Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259-R3-7, Midori-ku, Yokohama 226-8503 (Japan)
  • 4. Crystal Growth Laboratory, Namiki Precision Jewel Co., Ltd., Nitta 3-8-22, Adachi-ku, Tokyo 123-8511 (Japan)

Description

The ferromagnetic epitaxial Ni (111) thin film on the oxide substrate could be obtained by an epitaxy method, employing pulsed laser deposition (PLD) of epitaxial NiO (111) film on the sapphire (α-Al2O3) substrate and successive hydrogen reduction. The epitaxial NiO (111) film was deposited on the sapphire (0001) substrate at room temperature by PLD, and was reduced into the Ni epitaxial film by annealing (300 deg. C to 700 deg. C) in the hydrogen atmosphere, suggesting the possible formation of epitaxial [Ni metal/α-Al2O3] multilayer. The epitaxy of Ni film was proved by ex situ X-ray diffraction. The ferromagnetic anisotropy of the epitaxial Ni film was examined by superconducting quantum interference magnetometry

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.07.133

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.07.133;
PII
S0040-6090(07)01256-4;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
516
Journal Issue
12
Journal Page Range
p. 3873-3876
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.