Published April 30, 2008
| Version v1
Journal article
Fabrication of ferromagnetic Ni epitaxial thin film by way of hydrogen reduction of NiO
Creators
- 1. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta 4259-R3-6, Midori-ku, Yokohama 226-8503 (Japan)
- 2. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta 4259-J2-40, Midori-ku, Yokohama 226-8503 (Japan)
- 3. Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259-R3-7, Midori-ku, Yokohama 226-8503 (Japan)
- 4. Crystal Growth Laboratory, Namiki Precision Jewel Co., Ltd., Nitta 3-8-22, Adachi-ku, Tokyo 123-8511 (Japan)
Description
The ferromagnetic epitaxial Ni (111) thin film on the oxide substrate could be obtained by an epitaxy method, employing pulsed laser deposition (PLD) of epitaxial NiO (111) film on the sapphire (α-Al2O3) substrate and successive hydrogen reduction. The epitaxial NiO (111) film was deposited on the sapphire (0001) substrate at room temperature by PLD, and was reduced into the Ni epitaxial film by annealing (300 deg. C to 700 deg. C) in the hydrogen atmosphere, suggesting the possible formation of epitaxial [Ni metal/α-Al2O3] multilayer. The epitaxy of Ni film was proved by ex situ X-ray diffraction. The ferromagnetic anisotropy of the epitaxial Ni film was examined by superconducting quantum interference magnetometry
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2007.07.133Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2007.07.133;
- PII
- S0040-6090(07)01256-4;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 516
- Journal Issue
- 12
- Journal Page Range
- p. 3873-3876
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39071194
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; ANISOTROPY; ANNEALING; ENERGY BEAM DEPOSITION; EPITAXY; FABRICATION; HYDROGEN; INTERFERENCE; LASER RADIATION; LAYERS; NICKEL; NICKEL OXIDES; PULSED IRRADIATION; REDUCTION; SAPPHIRE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; CORUNDUM; CRYSTAL GROWTH METHODS; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; HEAT TREATMENTS; IRRADIATION; METALS; MINERALS; NICKEL COMPOUNDS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SCATTERING; SURFACE COATING; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.