Published April 2008
| Version v1
Journal article
Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering
Creators
- 1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)
Description
In this paper a numerical simulation of a planar DC magnetron discharge is performed with the Particle-in-Cell/Monte Carlo Collision (PIC/MCC) method. The magnetic field used in the simulation is calculated with finite element method according to experimental configuration. The simulation is carried out under the condition of gas pressure of 0.665 Pa and voltage magnitude of 400V. Typical results such as the potential distribution, charged particle densities, the discharge current density and ion flux onto the target are calculated. The erosion profile from the simulation is compared with the experimental data. The maximum erosion position corresponds to the place where the magnetic field lines are parallel to the target surface
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/17/4/055Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 17
- Journal Issue
- 4
- Journal Page Range
- p. 1475-1479
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44125002
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- CHARGED PARTICLES; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; EROSION; FINITE ELEMENT METHOD; ION COLLISIONS; MAGNETIC FIELDS; MAGNETRONS; MONTE CARLO METHOD; POTENTIALS; SPUTTERING; SURFACES
- Descriptors DEC
- CALCULATION METHODS; COLLISIONS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; EVALUATION; MATHEMATICAL SOLUTIONS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NUMERICAL SOLUTION; SIMULATION