Study on phonon-phonon relaxation in neutron-doped and usual silicon crystals

By analyzing experimental data on the dependence of the piezothermal electromotive force on the magnetic field H in the region of electron-phonon entrainment of n-Si uniaxially deformed crystals (doped from the melt and doped due to irradiation by thermal neutrons), phonon-phonon relaxation at T=85 has been studied on the basis of the anisotropic scattering theory. Comparison experiments showed that residual defects which appear in Si crystals in the process of transmutational doping and do not disappear for several hours in the process of technological annealing at 700-750 deg C, do not exert a pronounced influence directly on the electronic subsystem and substantially change the effects involving long-wave phonons which fit the inequality Λsub(p)<<Λsub(e)