Published April 10, 2007 | Version v1
Journal article

Laterally Aligned GaAs Quantum Dot Molecules Grown by Droplet Epitaxy

  • 1. Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
  • 2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)
  • 3. Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)

Description

Laterally aligned, unstrained GaAs/AlGaAs quantum dot molecules (QDMs) are created by droplet epitaxy, utilizing the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Single QDM photoluminescence spectra show a doublet structure, for which effective mass approximation calculations (including the size of the QDM) suggest it originates from molecular orbital energy levels in the QDM

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
893
Journal Issue
1
Journal Page Range
p. 109-110
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
28. international conference on the physics of semiconductors
Acronym
ICPS 2006
Dates
24-28 Jul 2006
Place
Vienna (Austria)

Optional Information

Notes
(c) 2007 American Institute of Physics