Published October 9, 1984 | Version v1
Patent Metadata-only

Process of and apparatus for laser annealing of film-like surface layers of chemical vapor deposited silicon carbide and silicon nitride

Creators

Description

A process of and related apparatus for achieving laser annealing of film-like surface layers of chemical vapor deposited silicon nitride and silicon carbide to relieve their inherent residual stresses. A laser beam is used to anneal the layers, in conjunction with a photoacoustic gas cell and related beam modulating means for utilizing a photoacoustic effect principal for monitoring, detecting and effectuating beam control as needed during the laser annealing process

Availability note (English)

U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.

Additional details

Publishing Information

Imprint Pagination
v p.
IPC:
Int. Cl. B23K 9/00.
IPC
Int. Cl. B23K 9/00.
Patent number
US patent document 4,476,150/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
16063446
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
ANNEALING; ARGON; CERAMICS; CHEMICAL VAPOR DEPOSITION; LASER RADIATION; LASERS; METALS; PHOTOACOUSTIC EFFECT; RADIATION MONITORING; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SILICON NITRIDES; STRESS RELAXATION; THIN FILMS
Descriptors DEC
AMPLIFIERS; CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; FILMS; HEAT TREATMENTS; MATERIALS; MONITORING; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; RADIATIONS; RARE GASES; SILICON COMPOUNDS; STRESSES; SURFACE COATING

Optional Information

Notes
PAT-APPL-496366.