Preparation of sample for STM luminescence spectroscopy of single SiC nanocrystal using CT probe

We aim at characterizing luminescence from nanometer-scale crystalline SiC volumes embedded on the crystalline Si surface by cathode luminescence and photo luminescence measurement methods with high-spacial resolution using a conductive transparent (CT) probe. The CT probe can inject electrons or photons for excitation in the same nanometer area, and detect weak luminescence with high efficiency. In order to observe STM luminescence spectroscopy using the CT probe, we prepared samples of nanoscale crystalline SiC volumes at the SiO₂/Si interface, by annealing SiO₂/Si substrate structures for various times in 200 mbar CO gas ambient pressure at 1100degC. It is found that the shorter the annealing time is, the smaller the size of nanocrystal is. We were able to synthesize the ideal sample having SiC nanocrystals within 10 nm in diameter on the Si surface by annealing for 30 minutes. (author)