Published April 15, 2009 | Version v1
Journal article Metadata-only

Ru underlayers for enhancement of in-plane magnetic anisotropy field of Ru/FeCoB film

Creators

  • 1. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan)

Description

FeCoB layer prepared on Ru underlayer exhibited a high magnetic anisotropy field Hk around 500 Oe. Sputtering conditions to fabricate Ru/FeCoB bilayered film with high Hk were examined. Low Ar gas pressure condition around 1 mTorr for the deposition of FeCoB layer was required to induce compressive stress in the film which may cause an expansion of the lattice. The sputtering gas of Ar was preferable than Kr to cause the lattice expansion which resulted in higher Hk. Thinner Ru underlayer caused high Hk of the Ru/FeCoB bilayered film. The sputtering gas pressure for Ru underlayer of 6 mTorr was better than that of 16 mTorr to attain high Hk of FeCoB upperlayer.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.mseb.2009.03.002

Additional details

Identifiers

DOI
10.1016/j.mseb.2009.03.002;
PII
S0921-5107(09)00107-X;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
161
Journal Issue
1-3
Journal Page Range
p. 134-137
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
2. international conference on the science and technology for advanced ceramics; STSI-I: 1. international conference on the science and technology of solid surfaces and interfaces
Acronym
STAC-II
Dates
23-25 May 2007
Place
Kanagawa (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41027589
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANISOTROPY; BORON; COBALT; DEPOSITION; FILMS; IRON; LAYERS; RUBIDIUM; SPUTTERING; STRESSES
Descriptors DEC
ALKALI METALS; ELEMENTS; METALS; SEMIMETALS; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.