Published April 2021 | Version v1
Journal article

Highly uniform microfluidic electroless interconnections for chip stacking applications

  • 1. Department of Materials Science and Engineering, National Taiwan University, Taipei City (China)
  • 2. Advanced Semiconductor Engineering Inc., Kaohsiung (China)
  • 3. Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei City (China)

Description

The high uniformity microfluidic electroless bonding processes of Nickel (Phosphorus) (Ni(P)), Copper (Cu), and Gold (Au) were achieved for the vertical interconnection between Cu pillars at very low bonding temperature and without pressure. Three flow patterns of electroless bonding system were investigated and applied which includes continuous flow, intermittent flow, and intermittent oscillatory flow. Atomic hydrogen and hydrogen gas bubbles were founded to be the cause of skip-plating and extraneous plating in the microchannel. The important parameters influencing the flow patterns are founded to be flow rate, stay time, and reverse flow and were investigated to deal with the intermediate and by-products so as to achieve a high degree of uniformity in the bonding. Furthermore, the effect of the geometry of Cu pillar on the formation of void and seam within the interconnection was included as well.

Additional details

Identifiers

DOI
10.1016/j.electacta.2021.138032;
PII
S0013468621003224;

Publishing Information

Journal Title
Electrochimica Acta
Journal Volume
376
Journal Page Range
vp.
ISSN
0013-4686
CODEN
ELCAAV

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
55050601
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COPPER; FLOW RATE; GEOMETRY; GOLD; HYDROGEN; NICKEL; PHOSPHORUS; PLATING
Descriptors DEC
DEPOSITION; ELEMENTS; MATHEMATICS; METALS; NONMETALS; SURFACE COATING; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2021 Elsevier Ltd. All rights reserved.