Highly uniform microfluidic electroless interconnections for chip stacking applications
Creators
- 1. Department of Materials Science and Engineering, National Taiwan University, Taipei City (China)
- 2. Advanced Semiconductor Engineering Inc., Kaohsiung (China)
- 3. Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei City (China)
Description
The high uniformity microfluidic electroless bonding processes of Nickel (Phosphorus) (Ni(P)), Copper (Cu), and Gold (Au) were achieved for the vertical interconnection between Cu pillars at very low bonding temperature and without pressure. Three flow patterns of electroless bonding system were investigated and applied which includes continuous flow, intermittent flow, and intermittent oscillatory flow. Atomic hydrogen and hydrogen gas bubbles were founded to be the cause of skip-plating and extraneous plating in the microchannel. The important parameters influencing the flow patterns are founded to be flow rate, stay time, and reverse flow and were investigated to deal with the intermediate and by-products so as to achieve a high degree of uniformity in the bonding. Furthermore, the effect of the geometry of Cu pillar on the formation of void and seam within the interconnection was included as well.
Additional details
Identifiers
- DOI
- 10.1016/j.electacta.2021.138032;
- PII
- S0013468621003224;
Publishing Information
- Journal Title
- Electrochimica Acta
- Journal Volume
- 376
- Journal Page Range
- vp.
- ISSN
- 0013-4686
- CODEN
- ELCAAV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55050601
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COPPER; FLOW RATE; GEOMETRY; GOLD; HYDROGEN; NICKEL; PHOSPHORUS; PLATING
- Descriptors DEC
- DEPOSITION; ELEMENTS; MATHEMATICS; METALS; NONMETALS; SURFACE COATING; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier Ltd. All rights reserved.