Published April 1, 2017 | Version v1
Journal article

Design of an efficient photoanode for dye-sensitized solar cells using electrospun one-dimensional GO/N-doped nanocomposite SnO2/TiO2

  • 1. Department of Chemistry, Faculty of Science, Sohag University, Sohag 82524 (Egypt)
  • 2. Department of Bionanosystem Engineering, Graduate School, Chonbuk National University, Jeonju, 561-756 (Korea, Republic of)
  • 3. Department of Chemical Engineering & Applied Chemistry, Chungnam National University, 220 Gung-Dong, Yuseong-Gu, Daejeon, 305-764 (Korea, Republic of)
  • 4. Department of Chemical Engineering, Faculty of Engineering, Minia University, El-Minia (Egypt)

Description

Highlights: • GO &N@SnO2/TiO2 NFs are synthesized via facile two steps. • The novel NFs photoanode exhibit high dye-loading ability; 2.164 × 10−7 mol/cm2. • Prolonged electron lifetime (20.09 ms) is due to reduced charge recombination. • High power conversion efficiency was achieved; 6.18%. - Abstract: This study presents the combination of N, graphene oxide (GO) and SnO2 as efficient dopants into TiO2 nanofibers (NFs) photoanode substrate for highly efficient dye-sensitized solar cells (DSCs). The developed NFs are synthesized by electrospinning and hydrothermal processes and characterized by FESEM, TEM, XPS, FT-IR, Raman and EDX-studies. The formation of short NFs is confirmed through FESEM and TEM measurements. As the results, the major crystal structure of TiO2 in the prepared NFs has anatase (85.23%) and rutile-structure (14.67%). XPS and EDX studies affirm that the material has Ti, O, Sn, N and C elements. In addition, FT-IR and Raman spectra give an indication about the GO-content. Typically, the DSC based on the novel NFs shows 6.18% efficiency. The Jsc, Voc, FF and Rct are estimated and found to be 10.32 mA cm−2, 0.825 V, 0.73 and 21.66 Ω, respectively. The high-power efficiency is contributed by three reasons. The first one is the high dye-loading (2.16 × 10−7 mol cm−2). The second reason is the enhanced charge transfer and decreasing of the electrons/holes recombination through formation of wide band-gap oxide (3.246 eV). Finally, the third one is GO-doping which may create new routes for the electron transfer in working electrode layer.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2016.12.176

Additional details

Identifiers

DOI
10.1016/j.apsusc.2016.12.176;
PII
S0169-4332(16)32909-9;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
400
Journal Page Range
p. 355-364
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.