Published April 28, 2008 | Version v1
Journal article Metadata-only

Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes

Creators

  • 1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Sendai 980-8579 (Japan)
  • 2. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
  • 3. New Industry Creation Hatchery Center, Tohoku University, Aoba-yama 6-6-10, Sendai 980-8579 (Japan)

Description

Magnetic tunnel junctions (MTJs) using L10-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt/MgO/CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffraction analyses revealed that both bottom and top CoPt electrodes were epitaxially grown with (001)-orientation. The L10-chemical order parameter of 0.82 was obtained for the bottom CoPt electrode deposited at substrate temperature of 600 deg. C. The transport measurements with applying magnetic field perpendicular to the film plane showed a tunnel magnetoresistance ratio of 6% at room temperature and 13% at 10 K

Additional details

Identifiers

DOI
10.1063/1.2913163;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
92
Journal Issue
17
Journal Page Range
p. 172502-172502.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39112209
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANISOTROPY; COBALT ALLOYS; DEPOSITION; ELECTRODES; EPITAXY; MAGNESIUM OXIDES; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; MONOCRYSTALS; ORDER PARAMETERS; PLATINUM ALLOYS; SPUTTERING; SUBSTRATES; SUPERCONDUCTING JUNCTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TUNNEL EFFECT; X-RAY DIFFRACTION
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FILMS; MAGNESIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METAL ALLOYS; SCATTERING; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS

Optional Information

Notes
(c) 2008 American Institute of Physics