Published September 2003 | Version v1
Journal article

Application-driven development of plasma source technology

  • 1. Department of Electrical and Computer Engineering and Computer Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States)
  • 2. Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115-5000 (United States)

Description

This article reviews major developments in etch- and deposition-driven plasma source technology over the past decades. We first review the radio-frequency parallel plate diode, summarizing its great impact but also its inherent problems. Ensuing sections then treat microwave plasma generation, electron cyclotron resonance power transfer enhancement, inductively coupled plasma sources, and (very briefly) the radio-frequency helicon source. We then introduce the important and relatively new issues of control of the ion energy distribution function and the tailoring of plasma chemistry, including the decoupling of chemistry from pressure and power. The emerging areas of ambient pressure plasma sources and miniature 'plasmas on a chip' are summarized, and we conclude with a brief view to the future

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Journal Volume
21
Journal Issue
5
Journal Page Range
p. S139-S144
ISSN
0734-2101
CODEN
JVTAD6

Optional Information

Notes
(c) 2003 American Vacuum Society.