Published February 16, 1992
| Version v1
Journal article
UV-radiation annealing of the electron- and X-irradiation damaged CMOS transistors
- 1. Faculty of Electronic Engineering, Univ. of Nis (Yugoslavia)
Description
The effects of UV-radiation on electron- and X-irradiation induced damage in CMOS transistors are investigated. It is found that the threshold voltage instabilities caused by the electron- and X-irradiation can be annealed by UV-radiation. Experimental data obtained are analyzed in view of mechanisms responsible for the observed annealing effects. (orig.)
Additional details
Publishing Information
- Journal Title
- Physica Status Solidi A
- Journal Volume
- 129
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 569-575
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 23070889
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ELECTRON SPIN RESONANCE; ELECTRONS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; X RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; HEAT TREATMENTS; IONIZING RADIATIONS; LEPTONS; MAGNETIC RESONANCE; RADIATION EFFECTS; RADIATIONS; RESONANCE; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- First results were presented at the 17. Yugoslav Conference on Microelectronics, Nis (Yugoslavia) May 1989.