Published March 1986
| Version v1
Journal article
Heavy ion Rutherford backscattering analysis applied to the electronic materials
- 1. Institute of Physical and Chemical Research, Wako, Saitama (Japan)
Description
Using Nitrogen ion beam from RILAC, the quantity and depth profile of heavy elements were measured by Rutherford backscattering. Some results very useful for the fabrication of semiconductor devices have been obtained. (author)
Additional details
Publishing Information
- Journal Title
- Hosei Daigaku Ion Bimu Kogaku Kenkyusho Hokoku
- Journal Issue
- suppl.5
- Series
- Hosei Daigaku Ion Bimu Kogaku Kenkyusho Hokoku.
- ISSN
- 0286-0201
- CODEN
- HDIHD
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 18038486
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; BACKSCATTERING; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY SPECTRA; HEAT TREATMENTS; MOLYBDENUM; NITROGEN 14 BEAMS; PERFORMANCE TESTING; PLATINUM; RUTHERFORD SCATTERING; SCHOTTKY BARRIER DIODES; SILICON
- Descriptors DEC
- BEAMS; ELASTIC SCATTERING; ELEMENTS; ION BEAMS; METALS; PHYSICAL PROPERTIES; PLATINUM METALS; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SPECTRA; TESTING; TRANSITION ELEMENTS