Published 1991 | Version v1
Book Metadata-only

Ion induced crystallization and growth of nanoscale grains in ceramics

Creators

  • 1. Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering
  • 2. Cornell Univ., National Nanofabrication Facility, Ithaca, NY (United States)

Description

This paper reports on self supporting thin films of amorphous alumina and zirconia that were irradiated with light and heavy ions at various temperatures (25-430 degrees C). Irradiation was found to result in the formation of 10-30 nm large grains well below conventional crystallization temperatures. These grains were quite stable against subsequent thermal growth. Crystallization, grain size, and growth depended on ion species as well as on stabilizing additives (yttria or Pt)

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-094-1
Imprint Title
Evolution of thin-film and surface microstructure
Imprint Pagination
731 p.
Journal Page Range
p. 633-638.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
24 Nov - 1 Dec 1990.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
23042512
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ADDITIVES; ALUMINIUM OXIDES; AMORPHOUS STATE; BEAM-PLASMA SYSTEMS; CHEMICAL COMPOSITION; CRYSTALLIZATION; GRAIN SIZE; ION BEAMS; PHYSICAL RADIATION EFFECTS; PLATINUM ADDITIONS; SOLID-STATE PLASMA; THIN FILMS; YTTRIUM ADDITIONS; ZIRCONIUM OXIDES
Descriptors DEC
ALUMINIUM COMPOUNDS; BEAMS; CHALCOGENIDES; CRYSTAL STRUCTURE; FILMS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PLASMA; RADIATION EFFECTS; SIZE; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS

Optional Information

Funding organization
National Science Foundation, Washington, DC (United States).
Secondary number(s)
CONF-901105--.