Published December 1, 2015 | Version v1
Journal article Metadata-only

Study of Nb/NbxSi1−x/Nb Josephson junction arrays

Creators

  • 1. National Institute of Metrology, Beijing 100029 (China)

Description

Owing to the adjustable characteristics and superior etching properties of co-sputtered NbxSi1−x film, we are trying to fabricate Nb/NbxSi1−x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable NbxSi1−x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current–voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/24/12/127402

Additional details

Identifiers

DOI
10.1088/1674-1056/24/12/127402;

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
24
Journal Issue
12
Journal Page Range
[4 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47096998
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CRITICAL CURRENT; ELECTRIC POTENTIAL; ETCHING; JOSEPHSON JUNCTIONS; NIOBIUM; NIOBIUM SILICIDES; SPUTTERING; THICKNESS; THIN FILMS
Descriptors DEC
CURRENTS; DIMENSIONS; ELECTRIC CURRENTS; ELEMENTS; FILMS; METALS; NIOBIUM COMPOUNDS; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SILICIDES; SILICON COMPOUNDS; SUPERCONDUCTING JUNCTIONS; SURFACE FINISHING; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNNEL JUNCTIONS