Published April 10, 2007 | Version v1
Journal article Metadata-only

Silicon Stokes terahertz laser

Creators

  • 1. Institute of Planetary Research, German Aerospace Center, Rutherfordstrasse 2, 12489 Berlin (Germany)
  • 2. Kavli Institute of Nanoscience Delft, Delft University of Technology, Postbus 5046, 2600 GA Delft (Netherlands)
  • 3. FOM-Institute for Plasma Physics, Postbus 1207, 3430 BE, Nieuwegein (Netherlands)
  • 4. Institute of Crystal Growth, Max-Born-Str. 2, 12489 Berlin (Germany)
  • 5. Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

Description

A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom

Additional details

Identifiers

DOI
10.1063/1.2730450;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
893
Journal Issue
1
Journal Page Range
p. 1445-1446
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
28. international conference on the physics of semiconductors
Acronym
ICPS 2006
Dates
24-28 Jul 2006
Place
Vienna (Austria)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39072044
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANTIMONY; CRYSTAL DOPING; CRYSTALS; DOPED MATERIALS; FREE ELECTRON LASERS; RAMAN SPECTRA; RESONANCE SCATTERING; SEMICONDUCTOR LASERS; SILICON; STIMULATED EMISSION; THZ RANGE
Descriptors DEC
ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; FREQUENCY RANGE; INELASTIC SCATTERING; LASERS; MATERIALS; METALS; SCATTERING; SEMICONDUCTOR DEVICES; SEMIMETALS; SOLID STATE LASERS; SPECTRA

Optional Information

Notes
(c) 2007 American Institute of Physics