Published April 7, 2000
| Version v1
Journal article
Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications
Description
We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si3N4, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films have a rectangular surface (100x400 μm2) and are 100 nm thick. Optimization of the thermometer shape, NbSi composition and electrical material contact is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques
Additional details
Identifiers
- PII
- S016890029901414X;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 444
- Journal Issue
- 1-2
- Journal Page Range
- p. 419-422
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Portugal
- INIS RN
- 35021185
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BOLOMETERS; MEASURING METHODS; NIOBIUM SILICIDES; SILICON NITRIDES; SUPERCONDUCTING DEVICES; THIN FILMS
- Descriptors DEC
- FILMS; MEASURING INSTRUMENTS; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.