Published April 7, 2000 | Version v1
Journal article

Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications

Description

We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si3N4, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films have a rectangular surface (100x400 μm2) and are 100 nm thick. Optimization of the thermometer shape, NbSi composition and electrical material contact is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques

Additional details

Identifiers

PII
S016890029901414X;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
444
Journal Issue
1-2
Journal Page Range
p. 419-422
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.