Published March 15, 2004
| Version v1
Journal article
Rigorous modeling approach to numerical simulation of SiGe HBTs
Description
We present results of fully two-dimensional numerical simulations of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in comparison with experimental data. Among the critical modeling issues discussed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown in Si
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2003.09.034;
- PII
- S0169433203011668;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 224
- Journal Issue
- 1-4
- Journal Page Range
- p. 361-364
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 1. international SiGe technology and device meeting - From materials and process technology to device and circuit technology
- Acronym
- ISTDM 2003
- Dates
- 15-17 Jan 2003
- Place
- Nagoya (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38091747
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANISOTROPY; COMPARATIVE EVALUATIONS; ELECTRON MOBILITY; EXPERIMENTAL DATA; GERMANIUM; GERMANIUM SILICIDES; HETEROJUNCTIONS; SILICON; SIMULATION; TRANSISTORS
- Descriptors DEC
- DATA; ELEMENTS; EVALUATION; GERMANIUM COMPOUNDS; INFORMATION; METALS; MOBILITY; NUMERICAL DATA; PARTICLE MOBILITY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.