Published 1984
| Version v1
Book
The electronic structure of X-irradiated surface oxides
Creators
- 1. Institut fuer Angewandte Physik, Technische Hochschule Darmstadt (Germany, F.R.)
Description
The electronic structure of thin insulating surface oxides has been investigated. Changes in the oxide charge and defect structure are accomplished by X-ray irradiation, variation in temperature and application of external electric fields. The data are consistent with shallow levels below the oxide conduction band minimum, deep levels above the oxide valence band maximum, and centres about midgap originating from absorbates at the oxide-vacuum interface and from positional and defect related disorder of the oxide
Additional details
Publishing Information
- Publisher
- Editions de Physique.
- Imprint Place
- Les Ulis (France)
- ISBN
- 2-902731-89-2
- Imprint Title
- Induced defects in insulators
- Imprint Pagination
- 288 p.
- Journal Page Range
- p. 187-191.
Conference
- Title
- MRS symposium on induced defects in insulators.
- Dates
- 5-8 Jun 1984.
- Place
- Strasbourg (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 17027594
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIDES; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; FILMS; PHYSICAL RADIATION EFFECTS; SURFACE PROPERTIES; TEMPERATURE DEPENDENCE; TRAPPING; X RADIATION
- Descriptors DEC
- ARSENIC COMPOUNDS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS