Published October 15, 2010 | Version v1
Journal article

Enhancing color purity and efficiency of white organic light-emitting diodes using a double-emitting layer

  • 1. Department of Materials Science, Shanghai University, Jiading, Shanghai 201800 (China)

Description

This paper presents white organic light-emitting diodes (WOLEDs) based on a novel double-emitting layer consisting of blue and white emitters. A blue fluorescent host of 4,40-bis(2,2-diphenylvinyl)-1,10-biphenyl (DPVBi) doped with 1,4-bis[2-(3-N-ethylcarbazoryl)vinyl]benzene (BCzVB) is used as the blue emitter, and this blue matrix doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4 H-pyran (DCJTB) is used as the white emitter. In this double-emitting system, the blue emitter not only emits but also assists energy transfer from DPVBi to DCJTB. More significantly, this blue emitter is expected to act as an effective trapping site for holes. It leads to the efficient recombination of electron–hole pairs in the emission region. The white emitter is used to fabricate WOLEDs, in which DCJTB, tris-(8-hydroxyquinoline) aluminum (Alq3) and DPVBi contribute to the red, green and blue emissive components, respectively. We have observed that this strategy can greatly improve the device performances such as better chromaticity, improved color stability and enhanced efficiency. Through the optimization of the device structure, a balanced white emission with Commission Internationale de L'Eclairage (CIE) color coordinates of (0.33, 0.37) was obtained. This device showed stable color coordinates, i.e. the maximum color shift is less than 0.02 units on CIE color coordinates at the current density range of 4–200 mA cm−2. The maximum luminance achieved was 21 044 cd m−2 at a driving voltage of 17 V, and the maximum luminance efficiency reached was 9.12 cd A−1 at the luminance of 292 cd m−2. Such excellent performance shows that this double-emitting layer structure has great potential as a white light source for eventual applications

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/25/10/105004

Additional details

Identifiers

DOI
10.1088/0268-1242/25/10/105004;
PII
S0268-1242(10)54065-3;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
25
Journal Issue
10
Journal Page Range
[8 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45010799
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CURRENT DENSITY; DOPED MATERIALS; EFFICIENCY; ENERGY TRANSFER; EQUIPMENT; FLUORESCENCE; LAYERS; LIGHT EMITTING DIODES; LIGHT SOURCES
Descriptors DEC
EMISSION; LUMINESCENCE; MATERIALS; PHOTON EMISSION; RADIATION SOURCES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES