Electronic, electrical and magnetic behavioural changes of layer by layer deposited Cd_0.4Zn_0.6S and r-GO composites thin film (Cd_0.4Zn_0.6S:r-GO) semiconductors

Cd_0.4Zn_0.6S:r-GO composite thin film semiconductor is prepared by the process of layer by layer deposition of cadmium zinc sulphide (Cd_0.4Zn_0.6S) and reduced graphene oxide (r-GO) on Si-substrate by DIP-coating technique. In this process, initially, aqueous solution of Cd_0.4Zn_0.6S is deposited on Si-substrate (Cd_0.4Zn_0.6S/Si) and baked at 500°C temperature, then, aqueous solution of r-GO is deposited on (Cd_0.4Zn_0.6S/Si) and baked at the same temperature to fabricate (r-GO/Cd_0.4Zn_0.6S/Si) composite thin film semiconductors. Structural/electronic/electrical/magnetic properties of (Cd_0.4Zn_0.6S:r-GO)/Si composite thin film semiconductor is enhanced in the vicinity of interfacial defects, impurities, density of states with exchange of metallic/non-metallic ions (Cd²⁺/Zn²⁺)/(S^2-, SO₃^2-) along with the incorporation of different O-functional radicals that immigrate from r-GO. It is expected that the Cd_0.4Zn _0.6S:r-GO composite thin film semiconductor is capable of providing future promising optoelectronic as well as magnetic device-based applications. (author)