Published July 15, 2013 | Version v1
Journal article Metadata-only

Tailoring of SiC nanoprecipitates formed in Si

Creators

  • 1. Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania)
  • 2. CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)
  • 3. Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France)
  • 4. CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)
  • 5. CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France)
  • 6. Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France)

Description

The SiC synthesis through single-beam of C+, and simultaneous-dual-beam of C+ and Si+ ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C+ and 890-keV Si+) and single-beam (520-keV C+) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2012.12.089

Additional details

Identifiers

DOI
10.1016/j.nimb.2012.12.089;
PII
S0168-583X(13)00111-0;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
307
Journal Page Range
p. 165-170
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
18. international conference on ion beam modifications of materials
Acronym
IBMM2012
Dates
2-7 Sep 2012
Place
Qingdao (China)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45065251
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BEAMS; CARBON IONS; DISTRIBUTION; EPITAXY; ION IMPLANTATION; KEV RANGE 100-1000; NUCLEAR REACTION ANALYSIS; PRECIPITATION; SHAPE; SILICON CARBIDES; SILICON IONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ENERGY RANGE; IONS; KEV RANGE; MICROSCOPY; NONDESTRUCTIVE ANALYSIS; SEPARATION PROCESSES; SILICON COMPOUNDS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.