Synthesis, crystal structure, resistivity, magnetic, and theoretical study of ScUS3
Creators
- 1. Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, (United States)
- 2. ICSM, UMR 5257 CEA/CNRS/UM2/ENSCM, Site de Marcoule - Bat. 426, BP 17171, 30207 Bagnols-sur-Ceze cedex, (France)
- 3. Laboratoire de Cristallographie, Resonance Magnetique et Modelisations - CRM2, UMR CNRS 7036,Institut Jean Barriol, Universite de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-les-Nancy, (France)
- 4. Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310-3706, (United States)
Description
Single crystals of ScUS3 were synthesized in high yield in a single step at 1173 K. ScUS3 crystallizes in the FeUS3 structure type in the space group D2h17-Cmcm of the orthorhombic system with four formula units in a cell of dimensions a = 3.7500(8) Angstroms, b = 12.110(2) Angstroms, and c = 9.180(2) Angstroms. Its structure consists of edge- and corner-sharing ScS6 octahedra that form two-dimensional layers. U atoms between layers are connected to eight S atoms in a bi-capped trigonal-prismatic fashion. ScUS3 can be easily charge-balanced as Sc3+U3+(S2-)3 as there are no S-S single bonds present in the crystal structure. High temperature-dependent resistivity measurements on a single crystal of ScUS3 show semiconducting behavior with an activation energy of 0.09(1) eV. A magnetic study on powdered single crystals of ScUS3 reveals an antiferromagnetic transition at 198 K followed by a ferromagnetic transition at 75 K. The weak ferromagnetic behavior at low temperature may originate from canted antiferromagnetic spins. A density functional theory (DFT) calculation predicts ScUS3 to be ferromagnetic and either a very poor metal or a semiconductor with a very small gap. (authors)
Availability note (English)
Available from doi: http://dx.doi.org/10.1021/ic502656uAdditional details
Identifiers
- DOI
- 10.1021/ic502656u;
Publishing Information
- Journal Title
- Inorganic Chemistry
- Journal Volume
- 54
- Journal Page Range
- p. 1684-1689
- ISSN
- 0020-1669
INIS
- Country of Publication
- United States
- Country of Input or Organization
- France
- INIS RN
- 49094494
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL PREPARATION; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL METHOD; ELECTRIC CONDUCTIVITY; MONOCRYSTALS; URANIUM COMPOUNDS
- Descriptors DEC
- ACTINIDE COMPOUNDS; CALCULATION METHODS; CRYSTALS; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; SYNTHESIS; VARIATIONAL METHODS
Optional Information
- Notes
- 41 refs.