Investigations of slow exchange processes at metal and oxide surfaces and interfaces using secondary ion mass spectrometry

Because of its high resolution in the penetration depth the method of ion beam sputtering with secondary ion mass spectrometry is very useful in the investigation of slow reactions occuring at surfaces or interfaces. The measurements yield the ion currents from elements of different masses as functions of penetration depth. In special cases these data allow conclusions to be reached about mechanisms and reaction rates. In many cases the concentrations of different elements have to be calculated as a function of the penetration depth in order to describe the kinetics of the reactions. At present such investigations are restricted to isotope exchange at interfaces. Both types of investigation are described. (Auth.)