Published March 15, 2007 | Version v1
Journal article

Far infrared properties of bulk sintered and thin film Zn2SnO4

  • 1. Center for Multidisciplinary Studies of University of Belgrade, Kneza Viseslava 1, 11000 Belgrade (Serbia)
  • 2. Institute of Technical Sciences of SASA, Knez Mihailova 35/IV, 11000 Belgrade (Serbia)
  • 3. National Renewable Energy Laboratory, Golden, CO 80401 (United States)
  • 4. Solid State Section, Physics Department, Aristotle University, 52124 Thessaloniki (Greece)
  • 5. Faculty of Electronic Engineering, University of Belgrade, Bulevar Kralja Aleksandra 72, 11000 Belgrade (Serbia)
  • 6. Institute of Microelectronics and Single Crystals, Njegoseva 12, 11000 Belgrade (Serbia)

Description

Room temperature far infrared reflectivity spectra of single phase spinel zinc-stannate thin films, prepared by rf magnetron sputtering on a glass substrate, and bulk sintered samples were measured. The sintered samples were obtained by mechanical activation of starting ZnO and SnO2 powders for 10 min followed by sintering at 1300 deg. C for 2 h. The reflectivity diagrams obtained for bulk samples were numerically analyzed using the four-parameter model of coupled oscillators. The optical parameters were determined for six observed ionic oscillators belonging to the spinel structure and two additional oscillators originating from the sintering procedure resulting from pores and grain boundaries. The reflectivity diagrams obtained for thin film samples were analyzed using the four-parameter model for optical phonons with a standard optical multi-layer technique

Additional details

Identifiers

DOI
10.1016/j.mseb.2006.12.005;
PII
S0921-5107(06)00691-X;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
138
Journal Issue
1
Journal Page Range
p. 7-11
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.