Published July 16, 2003 | Version v1
Journal article

Optically driven silicon-based quantum gates with potential for high-temperature operation

  • 1. Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)

Description

We propose a new approach to constructing gates for quantum information processing, exploiting the properties of impurities in silicon. Quantum information, embodied in electron spins bound to deep donors, is coupled via optically induced electronic excitation. Gates are manipulated by magnetic fields and optical light pulses; individual gates are addressed by exploiting spatial and spectroscopic selectivity. Such quantum gates do not rely on small energy scales for operation, so might function at or near room temperature. We show the scheme can produce the classes of gates necessary to construct a universal quantum computer. (letter to the editor)

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/15/L447/c327l2.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
15
Journal Issue
27
Journal Page Range
p. L447-L451
ISSN
0953-8984
CODEN
JCOMEL