Published July 16, 2003
| Version v1
Journal article
Optically driven silicon-based quantum gates with potential for high-temperature operation
Creators
- 1. Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)
Description
We propose a new approach to constructing gates for quantum information processing, exploiting the properties of impurities in silicon. Quantum information, embodied in electron spins bound to deep donors, is coupled via optically induced electronic excitation. Gates are manipulated by magnetic fields and optical light pulses; individual gates are addressed by exploiting spatial and spectroscopic selectivity. Such quantum gates do not rely on small energy scales for operation, so might function at or near room temperature. We show the scheme can produce the classes of gates necessary to construct a universal quantum computer. (letter to the editor)
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/15/L447/c327l2.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/15/L447/c327l2.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/15/27/102;
- PII
- S0953-8984(03)64964-7;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 15
- Journal Issue
- 27
- Journal Page Range
- p. L447-L451
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35000497
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINDING ENERGY; COLLECTIVE EXCITATIONS; DATA PROCESSING; ELECTRONS; INFORMATION; MAGNETIC FIELDS; QUANTUM ELECTRONICS; SILICON; SPIN; VALENCE
- Descriptors DEC
- ANGULAR MOMENTUM; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; ENERGY-LEVEL TRANSITIONS; EXCITATION; FERMIONS; LEPTONS; PARTICLE PROPERTIES; PROCESSING; SEMIMETALS