Published February 1, 2014 | Version v1
Journal article Metadata-only

Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates

Creators

  • 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
  • 2. School of Physical Engineering, Qufu Normal University, Qufu 273165 (China)
  • 3. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296 (Sweden)

Description

We investigated the growth of tensile-strained Ge on InAlP metamorphic templates by gas source molecular beam epitaxy. Good control of biaxial tensile strain in the Ge layer was demonstrated in the range of 0.5–2.0% by adjusting the In content of the metamorphic template. It was found that the growth of Ge was layer-by-layer (2D) even under high tensile strain of 2.0%, resulting in a smooth surface with roughness less than 1.5 nm. Hall results showed that the electron mobility of Ge increased monotonically with tensile strain.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2013.10.012

Additional details

Identifiers

DOI
10.1016/j.apsusc.2013.10.012;
PII
S0169-4332(13)01859-X;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
291
Journal Page Range
p. 45-47
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
The route to post-Si CMOS devices: from high mobility channels to graphene-like 2D nanosheets
Acronym
E-MRS 2013 spring meeting symposium I
Dates
27-30 May 2013
Place
Strasbourg (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46005144
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM COMPOUNDS; CRYSTAL GROWTH; ELECTRON MOBILITY; GERMANIUM; INDIUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; ROUGHNESS; STRAINS; SURFACES
Descriptors DEC
CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; METALS; MOBILITY; PARTICLE MOBILITY; SURFACE PROPERTIES

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.