Published December 22, 1978
| Version v1
Patent
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Method for the preparation of n-i-p type radiation detector from silicon
Creators
Description
The patent describes a procedure for the preparation of n-i-p type silicon radiation detectors. The aim was to provide an adaquate procedure for the production of α, β, γ-detectors from silicon available on the market, either p-type single crystal silicon characterised by its boron level. The procedure and the 9 claims are illustrated by two examples. (Sz.J.)
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Additional details
Additional titles
- Original title (Hungarian)
- Eljaras szilicium anyagu, n-i-p szerkezetue sugarzasdetektorok eloeallitasara
Publishing Information
- Imprint Pagination
- 17 p.
- IPC:
- Int. Cl. G01T1/24; H01L31/18.
- IPC
- Int. Cl. G01T1/24; H01L31/18.
- Patent number
- HU patent document 177153/A/
INIS
- Country of Publication
- Hungary
- Country of Input or Organization
- Hungary
- INIS RN
- 13659919
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ALPHA DETECTION; BETA DETECTION; BORON; DOPED MATERIALS; FABRICATION; GAMMA DETECTION; LI-DRIFTED JUNCTION DETECTORS; LI-DRIFTED SI DETECTORS; P-TYPE CONDUCTORS; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- CHARGED PARTICLE DETECTION; ELEMENTS; JUNCTION DETECTORS; LI-DRIFTED DETECTORS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SI SEMICONDUCTOR DETECTORS