Published May 1994 | Version v1
Journal article

New trends in ion implantation

Creators

  • 1. Akademie Ved Ceske Republiky, Ustav Jaderne Fyziky, Rez (Czech Republic)

Description

The physical principles of implantation are outlined, as are some theoretical and experimental aspects of the determination of the depth distribution of implanted ions. Discussed are specific problems of high-energy implantation, of combined implantation and deposition methods, ion channeling and implantation of atomic clusters, and formation of thin layers by ion implantation techniques. 16 figs., 63 refs

Additional details

Additional titles

Original title (Czech)
Nove smery v iontove implantaci

Publishing Information

Journal Title
Ceskoslovensky Casopis pro Fyziku
Journal Volume
44
Journal Issue
1
Journal Page Range
p. 11-27.
ISSN
0009-0700
CODEN
CKCFAH

INIS

Country of Publication
Czech Republic
Country of Input or Organization
Czech Republic
INIS RN
26013958
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ATOMIC CLUSTERS; BREMSSTRAHLUNG; DEPOSITION; DEPTH; ION BEAMS; ION CHANNELING; ION IMPLANTATION; SPATIAL DISTRIBUTION
Descriptors DEC
BEAMS; CHANNELING; DIMENSIONS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; RADIATIONS

Optional Information

Notes
English translation available from Nuclear Information Center, 156 16 Prague-Zbraslav, Czechoslovakia, at USD 10.- per typewritten page.