Published May 1994
| Version v1
Journal article
New trends in ion implantation
Description
The physical principles of implantation are outlined, as are some theoretical and experimental aspects of the determination of the depth distribution of implanted ions. Discussed are specific problems of high-energy implantation, of combined implantation and deposition methods, ion channeling and implantation of atomic clusters, and formation of thin layers by ion implantation techniques. 16 figs., 63 refs
Additional details
Additional titles
- Original title (Czech)
- Nove smery v iontove implantaci
Publishing Information
- Journal Title
- Ceskoslovensky Casopis pro Fyziku
- Journal Volume
- 44
- Journal Issue
- 1
- Journal Page Range
- p. 11-27.
- ISSN
- 0009-0700
- CODEN
- CKCFAH
INIS
- Country of Publication
- Czech Republic
- Country of Input or Organization
- Czech Republic
- INIS RN
- 26013958
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC CLUSTERS; BREMSSTRAHLUNG; DEPOSITION; DEPTH; ION BEAMS; ION CHANNELING; ION IMPLANTATION; SPATIAL DISTRIBUTION
- Descriptors DEC
- BEAMS; CHANNELING; DIMENSIONS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; RADIATIONS
Optional Information
- Notes
- English translation available from Nuclear Information Center, 156 16 Prague-Zbraslav, Czechoslovakia, at USD 10.- per typewritten page.