Published March 11, 2010
| Version v1
Journal article
The Electrical Properties of Co-Doped ZnO Thin Films
Creators
- 1. School of Physics, Universiti Sains Malaysia, 11800, Penang (Malaysia)
Description
Codoped ZnO thin films were prepared on silicon (111) substrates by cosputtering of aluminium rods and zinc target using DC magnetron sputtering followed by heat treatment at 400 deg. C for 1 hour at different ratios of oxygen and nitrogen gas. Results indicate that gas ratios influenced the film conduction properties, which had the lowest resistivity of 7.985x10-3 cm-3 and highest carrier concentration of 6.89x1021 cm-3.
Additional details
Identifiers
- DOI
- 10.1063/1.3377806;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1217
- Journal Issue
- 1
- Journal Page Range
- p. 171-175
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- International conference on advancement of materials and nanotechnology
- Acronym
- ICAMN-2007
- Dates
- 29 May - 1 Jun 2007
- Place
- Langkawi, Kedah (Malaysia)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41102125
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; CARRIER MOBILITY; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; HEAT TREATMENTS; OXYGEN; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS; ZINC; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; MATERIALS; METALS; MOBILITY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2010 American Institute of Physics