Published February 16, 2009 | Version v1
Journal article

Binding energy of hydrogen-Cd vacancy complex in CdTe

  • 1. Institute for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Xiangtan 411105 (China)
  • 2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China)

Description

The structural and electronic properties of hydrogen-Cd vacancy complex in CdTe have been studied by using density functional theory. Three typical complexes between hydrogen and Cd vacancy were found in our present study. The stablest complex P2 was predicted by using the formation energy and the binding energy. We found that the formation of the complex is exothermic and its binding energy is extremely large. The analysis of the transition energy level indicates that the forming of the complex turns the double acceptors caused by Cd vacancy to be a single one. The position of the single acceptor deeper than the shallow acceptor derived from the cation vacancy. At the same time, the forming of the complex directly increases the lifetime of the minority carrier from decreasing its concentration. The mechanism of the hydrogen passivation effect was also briefly discussed in our present study

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2008.12.039

Additional details

Identifiers

DOI
10.1016/j.physleta.2008.12.039;
PII
S0375-9601(08)01797-0;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
373
Journal Issue
7
Journal Page Range
p. 791-794
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.