Published 1996 | Version v1
Miscellaneous

UO2 etching by fluorine containing gas plasma for DUPIC process

  • 1. Hanyang Univ., Seoul (Korea, Republic of)

Description

Research on the dry etching of UO2 by using fluorine containing gas plasma is carried out for DUPIC (Direct Use of PWR spent fuel Into Candu) process which is taken into consideration for potential future fuel cycle in Korea. CF4/O2 gas mixture is chosen for the reactant gas and the etching rates of UO2 by the gas plasma are investigated as functions of substrate temperature, plasma gas pressure, CF4/O2 ratio, and plasma power. It is tentatively found that the etching rate can reach 1000 monolayers/min. and the optimum CF4/O2 ratio is around 4:1. (author)

Part of:
Proceedings of the 2nd Japan-Korea seminar on advanced reactors

Additional details

Publishing Information

Imprint Title
Proceedings of the 2nd Japan-Korea seminar on advanced reactors
Imprint Pagination
299 p.
Journal Page Range
p. 163-165.
Report number
INIS-JP--072

Conference

Title
2. Japan-Korea seminar on advanced reactors.
Dates
15-17 Oct 1996.
Place
Tokyo (Japan).

Optional Information