Published January 1, 1984
| Version v1
Journal article
Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures
Creators
- 1. Sandia National Laboratories, Albuquerque, New Mexico 87185
Description
We find that two paramagnetic ''trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 44
- Journal Issue
- 1
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 96-98
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 15033066
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CAPACITANCE; COLOR CENTERS; E CENTERS; ELECTRIC POTENTIAL; ELECTRON SPIN RESONANCE; GAMMA RADIATION; HOLES; MOSFET; NITROGEN; OXIDATION; PHYSICAL RADIATION EFFECTS; SILICON; SILICON OXIDES; TRAPS; VERY HIGH TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; FIELD EFFECT TRANSISTORS; HEAT TREATMENTS; IONIZING RADIATIONS; MAGNETIC RESONANCE; MOS TRANSISTORS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; RESONANCE; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS; VACANCIES